Abstract No.:
4709

 Title:
Influence of different content of free silicon on the oxidation resistance of SiC coatings on the C/SiC composites

 Authors:
Fang Jia / Beijing General Research Institute of Mining and Metallurgy, P.R. China
Haoran Peng/ Beijing General Research Institute of Mining & Metallurgy, China
Xiaojuan Ji/ Beijing General Research Institute of Mining & Metallurgy, China
Xin Zhang/ Beijing General Research Institute of Mining & Metallurgy, China

 Abstract:
SiC coatings with different content of free silicon were prepared on C/SiC composites in a vacuum atmosphere by pack cementation technique to protect the substrate from oxidation. The microstructure of the coatings was investigated by XRD, SEM and EDS analyses. Cyclic oxidation test at 1500 °C in air atmosphere was performed. Cracks and voids of the coatings were reduced with the increasing content of free silicon. The SiC coating with appropriate content of silicon exhibited better oxidation resistance compared to that without silicon. However, higher content of free silicon was not beneficial for SiC coating to improve anti-oxidation performance. Possible mechanisms related to oxidation were preliminarily discussed.

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