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Tuesday, June 19, 2007, Brüssel 5:20 PM Diffusionsschweißen, Mikro- und Nanotechnologie, Korrosion und Korrosionsschutz, Integrierte Fertigung Diffusion bonding, micro- and nanotechnologies, corrosion and corrosion protection, integration of brazing into the production process |
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Interfacial Reaction between SiC Single Crystal and Ti/Al Multilayered Contact Films |
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Masakatsu Maeda* / Center for Advanced Science and Innovation, Osaka University, Japan Kazumasa Nonomura / Graduate School of Engineering, Osaka University, Japan Yasuo Takahashi/ Center for Advanced Science and Innovation, Osaka University, Japan Kazuyuki Tenyama/ Graduate School of Engineering, Osaka University, Japan |
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The interfacial reaction behavior and resultant microstructure between silicon carbide (SiC) single crystal substrates and multilayered deposition films of titanium and aluminum were investigated to obtain basic knowledge required for manufacturing good Ohmic contacts on p-type SiC wide band-gap semiconductors. SiC single crystal with (0001) surface orientation was used as the substrate. Pure titanium and aluminum were deposited on SiC substrates sequentially and then annealed in vacuum. The interfacial microstructure was analyzed by X-ray diffraction, transmission electron microscopy, and electron probe microanalysis. The analysis result indicates that the reaction within the Ti / Al deposition film to form TiAl3 + Al(liq.) takes place at first, followed by the interfacial reaction between SiC and the deposition film. By rapid heating up to the annealing temperature of 1273 K, the reaction in the deposition film forms TiAl3 + Al(liq.) being both phases in contact with SiC. Not only Ti3SiC2 but several kinds of reaction products are formed at the SiC / (TiAl3 + Al(liq.)) interface. On the other hand, TiAl3 and Al(liq.) is formed as stacked layers by temporarily stopping the temperature rise for 3.6 ks at 973 K. In this case, the single layer of Ti3SiC2 is successfully formed. |